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| DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D050 BA481 UHF mixer diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification UHF mixer diode FEATURES * Low forward voltage * Hermetically-sealed leaded glass package * Low diode capacitance. APPLICATIONS * UHF mixer * Sampling circuits * Modulators * Phase detection. Cathode indicated by a grey band. k handbook, halfpage a BA481 DESCRIPTION Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. MAM193 Fig.1 Simplified outline (SOD68; DO-34), and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER - - -65 - MIN. 4 30 +125 100 MAX. V mA C C UNIT 1996 Mar 19 2 Philips Semiconductors Product specification UHF mixer diode ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF forward voltage PARAMETER see Fig.2 IF = 1 mA IF = 10 mA IR rs F Cd Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD68 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 320 reverse current series resistance noise figure diode capacitance VR = 4 V; see Fig.3 f = 1 kHz; IF = 5 mA f = 900 MHz; note 1 f = 1 MHz; VR = 0 V; see Fig.4 450 600 10 13 8 1.1 CONDITIONS MAX. BA481 UNIT mV mV A A dB pF VR = 4 V; Tamb = 60 C; see Fig.3 100 UNIT KW 1996 Mar 19 3 Philips Semiconductors Product specification UHF mixer diode GRAPHICAL DATA 10 2 handbook, halfpage I F (mA) 10 (1) (2) (3) (4) MGC684 BA481 10 4 handbook, halfpage IR (nA) (1) MGC685 10 3 10 2 (2) (3) 10 1 (4) 1 10 -1 0 0.2 0.4 0.6 VF (V) 0.8 (1) (2) (3) (4) 10 -1 0 1 2 3 VR (V) 4 (1) (2) (3) (4) Tamb = 100 C. Tamb = 60 C. Tamb = 25 C. Tamb = -40 C. Tamb = 100 C. Tamb = 60 C. Tamb = 25 C. Tamb = -40 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. 1.00 Cd (pF) MGC683 0.75 0.50 0.25 0 1 2 3 VR (V) 4 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 19 4 Philips Semiconductors Product specification UHF mixer diode PACKAGE OUTLINE BA481 handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The grey marking band indicates the cathode. Fig.5 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Mar 19 5 |
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